for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - chip 0 0 - 1 hmc998 v01.0811 ga a s phemt mmic 2 watt power amplifier, 0.1 - 22 ghz functional diagram features h igh p 1db o utput p ower: +31 dbm h igh p sat o utput p ower: +33 dbm h igh gain: 12 db h igh o utput ip 3: +41 dbm s upply voltage: vdd = +10v to +15v @ 500 ma 50 o hm m atched i nput/ o utput die s ize: 2.99 x 1.84 x 0.1 mm typical applications the hm c998 is ideal for: ? test instrumentation ? microwave radio & vsat ? military & space ? telecom infrastructure ? fiber optics general description the hm c998 is a gaas mmic phemt distributed power amplifer die which operates between dc and 22 g h z. the amplifer provides 12 db of gain, +41 dbm output ip 3 and +31 dbm of output power at 1 db gain compression while requiring 500 ma from a +15v supply. this versatile pa exhibits a positive gain slope from 1 to 18 g h z making it ideal for ew , e c m , r adar and test equipment applications. the hm c998 amplifer i / o s are internally matched to 50 o hms facilitating integration into mutli-chip- modules ( m c m s). all data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). electrical specifcations, t a = +25 c, vdd = +15v, vgg2 = +9.5v, idd = 500 ma* p arameter m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. units f requency r ange 0.1 - 2 2 - 18 18 - 22 g h z gain 9.5 11.5 10.5 12.5 10.5 12.5 db gain f latness 0.1 0.7 0.6 db gain variation o ver temperature 0.006 0.11 0.016 db/ c i nput r eturn l oss -20 -20 -15 db o utput r eturn l oss -7 -20 -20 db o utput p ower for 1 db compression ( p 1db) 29 31 29 31.5 27 30 dbm s aturated o utput p ower ( p sat) 33 33.5 33 dbm o utput third o rder i ntercept ( ip 3) 41 41 40 dbm n oise f igure 10 4 5 db s upply current ( i dd) (vdd= 15v, vgg1= -0.7v typ.) 500 500 500 ma * adjust vgg1 between -2 to 0v to achieve idd = 500ma typical.
for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - chip 0 0 - 2 hmc998 v01.0811 ga a s phemt mmic 2 watt power amplifier, 0.1 - 22 ghz output return loss vs. temperature gain & return loss gain vs. temperature low frequency gain & return loss input return loss vs. temperature noise figure vs. frequency -30 -20 -10 0 10 20 0 5 10 15 20 25 30 s21 s11 s22 response (db) frequency (ghz) 6 8 10 12 14 16 18 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -55c gain (db) frequency (ghz) -40 -30 -20 -10 0 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -55c return loss (db) frequency (ghz) -40 -30 -20 -10 0 0 4 8 12 16 20 24 +25c +85c -55c response (db) frequency (ghz) 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -55c noise figure (db) frequency (ghz) -50 -40 -30 -20 -10 0 10 20 0.0001 0.001 0.01 0.1 1 10 s21 s11 s22 response (db) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - chip 0 0 - 3 hmc998 v01.0811 ga a s phemt mmic 2 watt power amplifier, 0.1 - 22 ghz psat vs. vdd p1db vs. temperature psat vs. temperature output ip3 vs. temperature @ pout = 18 dbm tone p1db vs. vdd 24 26 28 30 32 34 36 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -55c p1db (dbm) frequency (ghz) 24 26 28 30 32 34 36 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -55c psat (dbm) frequency (ghz) 24 26 28 30 32 34 36 0 2 4 6 8 10 12 14 16 18 20 22 10v 12v 14v 15v p1db (dbm) frequency (ghz) 24 26 28 30 32 34 36 0 2 4 6 8 10 12 14 16 18 20 22 10v 12v 14v 15v psat (dbm) frequency (ghz) 25 30 35 40 45 50 0 2 4 6 8 10 12 14 16 18 20 22 +25c +85c -55c ip3 (dbm) frequency (ghz) output ip3 vs. vdd @ pout = 18 dbm tone 25 30 35 40 45 50 0 2 4 6 8 10 12 14 16 18 20 22 10v 12v 14v 15v ip3 (dbm) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - chip 0 0 - 4 hmc998 v01.0811 ga a s phemt mmic 2 watt power amplifier, 0.1 - 22 ghz output ip3 vs. output power @ 11 ghz power compression @ 20 ghz second harmonics vs. temperature @ pout = 18 dbm power dissipation power compression @ 4 ghz power compression @ 10 ghz 25 30 35 40 45 50 10 12 14 16 18 20 22 400 ma 450 ma 500 ma ip3 (dbm) output power (dbm) 0 5 10 15 20 25 30 35 0 5 10 15 20 25 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 0 5 10 15 20 25 30 35 0 5 10 15 20 25 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 0 5 10 15 20 25 30 35 0 5 10 15 20 25 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 18 20 22 max pdis @ 85c 2 ghz 10 ghz 20 ghz power dissipation (w) input power (dbm) 0 10 20 30 40 50 60 70 0 4 8 12 16 20 24 +25c +85c -55c second harmonic (dbc) frequency(ghz)
for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - chip 0 0 - 5 hmc998 v01.0811 ga a s phemt mmic 2 watt power amplifier, 0.1 - 22 ghz absolute maximum ratings drain bias voltage (vdd) +17 vdc gate bias voltage (vgg1) -3 to 0 vdc gate bias voltage (vgg2) vgg2 = (vdd - 6.5v) to (vdd-4.5v) rf i nput p ower ( rfin ) +27 dbm channel temperature 150 c continuous p diss (t= 85 c) (derate 129 mw/c above 85 c) 8.4 w thermal r esistance (channel to die bottom) 7.73 c/ w o utput p ower into v swr >7:1 +32 dbm s torage temperature -65 to 150c o perating temperature -55 to 85 c vdd (v) i dd (ma) +12 500 +14 500 +15 500 typical supply current vs. vdd ele ct ros tat i c sensi t i v e d e v i c e o b ser v e han d lin g pre caut ions second harmonics vs. pout 0 10 20 30 40 50 60 70 0 4 8 12 16 20 24 +12 dbm +14 dbm +16 dbm +18 dbm +20 dbm +22 dbm second harmonic (dbc) frequency(ghz) second harmonics vs. vdd @ pout = 18 dbm 0 10 20 30 40 50 60 70 0 4 8 12 16 20 24 +12v +14v +15v second harmonic (dbc) frequency(ghz) reverse isolation vs temperature -80 -70 -60 -50 -40 -30 -20 -10 0 0 4 8 12 16 20 24 +25c +85c -55c isolation (db) frequency (ghz) vgg1 adjust to achieve i dd = 500 ma
for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - chip 0 0 - 6 hmc998 v01.0811 ga a s phemt mmic 2 watt power amplifier, 0.1 - 22 ghz outline drawing no t es : 1. a ll d imensions a re in in c hes [ mm ] 2. d ie t hi ck ness is 0.004 3. ty pi ca l b on d p ad is 0.004 s qua re 4. b on d p ad me ta li zat ion : g ol d 5. back si d e me ta li zat ion : g ol d 6. back si d e me ta l is g ro u n d 7. no c onne ct ion re qu ire d for u nl ab ele d b on d p ad s 8. o v er a ll d ie si z e 0.002 die packaging information [1] s tandard alternate g p -1 (gel p ack) [2] [1] for more information refer to the packaging information document in the product support section of our website . [2] for alternate packaging information contact hittite microwave corporation.
for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - chip 0 0 - 7 hmc998 v01.0811 ga a s phemt mmic 2 watt power amplifier, 0.1 - 22 ghz pad number f unction description i nterface s chematic 1 rfin this pad is dc coupled and matched to 50 o hms. blocking capacitor is required. 2 vgg2 gate control 2 for amplifer. attach bypass capacitor per application circuit herein. f or nominal operation +9.5v should be applied to vgg2. 4, 7 acg2, acg4 low frequency termination. attach bypass capacitor per application circuit herein. 3 acg1 low frequency termination. attach bypass capacitor per application circuit herein. 5 rfo ut & vdd rf output for amplifer. connect dc bias (vdd) network to provide drain current ( i dd). s ee application circuit herein. 6 acg3 low frequency termination. attach bypass capacitor per application circuit herein. 8 vgg1 gate control 1 for amplifer. attach bypass capacitor per application circuit herein. p lease follow mmi c amplifer biasing p rocedure application note. die bottom g n d die bottom must be connected to rf/dc ground. pad descriptions
for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - chip 0 0 - 8 hmc998 v01.0811 ga a s phemt mmic 2 watt power amplifier, 0.1 - 22 ghz application circuit note 1: drain bias (vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 800ma assembly diagram
for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - chip 0 0 - 9 hmc998 v01.0811 ga a s phemt mmic 2 watt power amplifier, 0.1 - 22 ghz mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hm c general h andling, m ounting, bonding n ote). 50 o hm m icrostrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane ( f igure 2). microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protec - tive containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. d o no t attempt to clean the chip using liquid cleaning systems. static sensitivity: f ollow es d precautions to protect against > 250v es d strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. e utectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do no t expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom - mended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab
for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - chip 0 0 - 10 hmc998 v01.0811 ga a s phemt mmic 2 watt power amplifier, 0.1 - 22 ghz notes:
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